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| Common Cathode Fast Recovery Epitaxial Diode (FRED) DSEK 60 IFAVM = 2x 26 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type TO-247 AD A C A DSEK 60-12A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM yyx IFRM IFSM Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 26 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g Features q q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque Applications q q q Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders 125 0.8...1.2 6 Advantages q q Symbol Test Conditions Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 70 mA mA mA V V V mW K/W K/W K/W ns A q IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 30 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C q q High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling VF VT0 rT RthJC RthCK RthJA trr IRM For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C 40 16 60 18 (c) 2000 IXYS All rights reserved 1-2 036 x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions DSEK 60, 1200 V 70 A 60 50 IF 40 30 20 10 0 0 1 VF 2 3 V 4 6 T =100C C VVJ= 540V R 5 4 TVJ=25C TVJ=100C TVJ=150C Qr 3 2 max. 1 0 1 10 -diF/dt 100 A/s 1000 typ. IF=30A IF=60A IF=30A IF=15A 50 A 40 IRM TVJ=100C VR= 540V IF=30A IF=60A IF=30A IF=15A max. 30 20 typ. 10 0 0 200 -diF/dt 400 A/s 600 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 1200 ns 1000 VFR 800 tfr 30 20 600 400 tfr 1.0 s 0.8 TVJ=100C VR=540V V 50 40 VFR IRM trr max. 0.6 IF=30A IF=60A IF=30A IF=15A QR 0.4 0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 -diF/dt 400 A/s 600 typ. 10 0 0 200 diF/dt TVJ=125C IF=30A 400 A/s 600 200 0 Fig. 4 Dynamic parameters versus junction temperature. 1.0 K/W 0.8 ZthJC 0.6 Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. A B C D E F Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 0.4 G H J K 0.2 0.0 0.001 0.01 0.1 t 1 s 10 M N L M N Fig. 7 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 2-2 |
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